QUARTZ AND GLASS PHOTOMASK BLANKS

  • Chrome-plated photomask blanks on glass and quartz substrates with photo- and electron resists

  • Fabrication of quartz and glass wafers of different purpose

  • Development of technology and production of photomask blanks of new generation according to microelectronics and nanotechnology requirements

 

FIELDS OF APPLICATION

Photomask blanks are intended for fabrication of photomasks used for IC and other microelectronic devices production:

  • Integrated circuits (IC) (microprocessors and microcontrollers);
  • ICs for home appliances;
  • ICs for industrial electronics;
  • ICs for TV sets;
  • ICs for communication systems;
  • ICs for memory devices;
  • ICs for standard logic devices.

 

SPECIFICATION

Parameters
Substrate material Alkaline glass Quartz
Size, mm 102 х 102 
127 х 127
153 х 153
Thickness, mm 2,2 ÷ 2,6
3,0 ÷ 0,5 
3,0 ÷ 0,5		 2,2 ÷ 2,4
2,95 ÷ 3,15
6,25 ÷ 6,45
Flatness deviation, µm 2, 5, 10
Linear expansion temperature coefficient, degree-1 80 • 10-7 7,5 • 10-7
Masking layer chrome, chrome oxide
Optical density, relative unit, λ - 450 nm 3,2 ± 0,2
Reflection coefficient, %
λ - 436 nm		 > 40
25 ÷ 40
10 ÷ 25
Masking layer thickness, Å chrome 500 ÷ 700 
chrome, chrome oxide 1000 ÷1200
Pinholes in masking layer, cm 0,1; 0,05; 0,02 0,05; 0,02
* Resist type Photoresist (S - 1815 etc)
Electron resist (positive electron resist - 40, etc)
* Resist film thickness, µm 0,3 ÷ 1,0

NOTE:
* Resist type and resist film thickness may change according to agreement with the customer.
Photomask blank main parameters correspond to SEMI standard. 

QUARTZ AND GLASS WAFERS OF DIFFERENT PURPOSE

Parameters
Glass type Quartz, K - 8, K - 105 etc
Size, mm Square, to 150 Х 150
Round, Ø to 230
Thickness, mm 0,8 ÷ 8,0
3,0 ÷ 0,5
Taper, µm per 100 mm 5; 10; 20
Flatness, µm/cm 0,2; 0,5; 1,0