МAGNETOOPTIC STRUCTURES
- Development of ferrite-garnet structures and based on them wave guiding elements for microwave frequency and extremely high frequency devices
- Epitaxial nonmagnetic garnet structures for laser equipment
- Epitaxial magnetooptic ferrite-garnet structures
FIELDS OF APPLICATION
- Garnet epitaxial structures production;
- Magnetooptic devices for visualization and topography of magnetic fields spatial structure;
- Magnetic field sensors and physical quantity transformers;
- Lase equipment and fiber-optic communication lines;
- Microwave frequency electronics.
SPECIFICATIONS
Garnet substrates
| Parameters | ||
| Substrate material | Gd3Ga5O12- GGG Gd3-xCaxGa5-x-2yMgyZrx-yO12-CMZ GGG Gd3Sc2Ga3O12-GSGG |
|
| Crystal lattice parameter, Å: GGG CMZGGG GSGG |
12,382 +- 0,001 12,496 +- 0,001 12,560 +- 0,001 |
|
| Surface crystallographic orientation GGG CMZGGG GSGG |
(111); (100); (110) (111); (100) (111) |
|
| Surface crystallographic orientation deviation, degree | +- 0,1 | |
| Surface diameter, mm GGG CMZGGG; GSGG |
76; 100 76 |
|
| Substrate thickness, mm | 0,46 +- 0,03 | |
| Nonflatness, μm/cm | From 0,5 per 80% of central region | |
Magnetooptic epitaxial ferrite-garnet structures
| Parameters | |
| Structure diameter, mm | 76; 100 |
| Epitaxial film thickness, μm | 1,0 - 100 |
| Magnetic anisotropy type | Uniaxial; Planar («easy plane») |
| Specific Faraday rotation per l=0,63 μm, degree/cm | More than 104 |
| Spatial resolution, μm | To 0,5 |
| Saturation magnetization,4nМs, gauss | 50 - 1800 |
| Magnetic saturation field intensity, oersted | 10 - 1000; 300 - 10<sup4< sup=""> |
| Sensitivity to magnetic field, oersted | Not worse than 0,1; Not worse than 10-5 |
| Frequency range, Hz | 0 - 106; 0 - 109 |
| Operating temperature range, 0С | 0 - 150; -269 - 150 |
FIELDS OF APPLICATION
Magnetooptic visualization and topography of magnetic fields spatial structure
Magnetic field sensors and physical quantity transformers
Magnetooptical materials based on ferrite-garnet provide magnetic field linear and local transformation into optical signal. They are used as sensitive element in magnetic field sensors and in physical quantity transformers for sensors of:
- spatial position;
- linear translation;
- rotation frequency;
- acceleration;
- electric current contact-free measurement.
Epitaxial structures of yttrium-ferrum garnet (YFG) and wave guiding elements based on them for microwave frequency devices
| Parameters | |
| Structure diameter, mm | 76; 100 |
| YFG epitaxial film thickness, μm | 3,0 - 60 |
| Saturation magnetization,4nМs, gauss | 1750 |
| Ferromagnetic resonance line width, oersted | ‹ 0,5 |
| Frequency range, GHz | 3,5 - 18 |
| Wave guiding element configuration and size | Determined by photomask blank topology (provided by the customer) |
Application of wave guiding elements based on YFG epitaxial structures
- Microwave frequency devices operating on magnetostatic waves (MSW) and produced by Russian industry.
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| Convertible low-and-high-pass filter with electric frequency tuning. Operating frequency range – 4,0...20,0 GHz. | Low-and-high-pass filter. Operating frequency range – 2,0...20,0 GHz. |
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| Quick-convertible low-and-high-pass filter. Operating frequency range – 8,0...10,1 GHz. | Low-and-high-pass filter. Operating frequency range 8,0...11,5 GHz. |
Epitaxial garnet structures for laser equipment
| Epitaxial film chemical composition | Substrate material | Dopant | Notes |
| Gd3Ga5O12 | GGG: Nd | - | Active laser element. Generation wavelength 1,062 μm |
| Gd3Ga5O12 | GGG | Nd3+ | Active laser element. Generation wavelength 1,062 μm |
| Gd3Ga5O12 | GGG: Yb | Yb3+ | Active laser element. Generation wavelength 1,038 μm |
| Gd3Ga5O12 | GGG | Cr4+ и Ca2+ | Active laser element. Generation wavelength 1,5 μm |
| Gd3(Al,Sc)5O12 | GGG | Cr4+ и Ca2+ | Active laser element. Generation wavelength 1,5 μm |









