SEMICONDUCTOR MATERIALS BASED ON АII-ВVI COMPOUNDS
- Development and fabrication of AIIBVI compound single crystals and these compounds solid solutions for IR-equipment, dosimetry, optoelectronics elemental base, medical equipment, inspection equipment and radiation safety devices
- Development and synthesis of polycrystalline ultrapure compounds of AIIBVI type used as sources at single crystal growth and spraying
- Development of basic processes, materials, structures and crystal elements of devices on the basis of AIIBVI Group compounds, with new functional characteristics, and arrangement of their experimental-industrial production
- Development of new materials for prospective designs in the field of energy sector, communication systems, navigation, ecologic monitoring
FIELDS OF APPLICATION
Zink selenide (ZnSe) | Cyan and blue color radiation sources, IR-optics passive elements, IR-optics Cr, Te active elements and X-ray sensitive detectors, substrates for epitaxy. |
Cadmium telluride (CdTe) Zink telluride (ZnTe) Solid solution ( CdZnTe) |
Electro-optical modulators, X-ray and radioactive radiation detectors, IR-detectors and IR-optics elements, substrates for epitaxy. |
Cadmium selenide (CdSe) Cadmium sulphide (CdS) Solid solutions (CdSSe), (ZnCdS) |
Tunable IR-lasers, lasers with electron-beam pumping in radiation visible region, wave plates for IR-optics. |
SPECIFICATION
Zinc selenide (ZnSe), cadmium telluride (CdTe), cadmium sulphide (CdS), cadmium selenide (CdSe), zinc telluride (ZnTe)
Parameters | |||||
ZnSe | CdTe | CdS | CdSe | ZnTe | |
Energy gap width, eV | 2,7 | 1,5 | 2,42 | 1,72 | 2,23 |
Crystal structure | cubic | cubic | hexagonal | hexagonal | cubic |
Lattice constant, Å | 5,67 | 6,48 | 4,137 6,71 |
4,29 7,01 |
6,10 |
Diameter, mm | 50 | 50 | 100 | 100 | 50 |
Dislocation density, cm-2 | < 5×103 | < 5×104 | < 2×104 | < 5×104 | < 5×104 |
Growth method | vapor-phase, melt | vapor-phase, melt | vapor-phase | vapor-phase | vapor-phase |
Transmission range, µm | 0,5 -19 | 1 - 28 | 0,5 - 16 | 0,8 - 23 | 0,5 - 26 |
Exciton band wavelenght inluminescence in spectrum, nm | 444 ± 2 | 795 ± 2 | 487 ± 2 | 690 ± 2 | 528 ± 2 |
Orientation | (111), (100) | (111), (110) (013) |
(0001), (1010), (1120) |
0001), (1010), (1120) |
(111) |
Dopant | Cr, Te | In, Cl | In, Cu, Ag | In, Cu, Ag | - |
Optical absorption(volume)at 10,6 µm, cm-1 | < 5×10-3 | < 5×10-3 | < 1×10-2 | < 1×10-2 | < 1×10-2 |