SILICON DETECTORS AND PHOTODIODES

  • Development and fabrication of silicon detectors of nuclear and X-ray radiation for Russian and international experiments in the field of high-energy physics.
  • Development and fabrication of high-speed p-i-n photodiodes for radiometry and spectrometry.
  • Development and fabrication of photodiode matrices. 

 

FIELDS OF APPLICATION

  • cosmic-ray physics;
  • high-energy physics;
  • nuclear physics;
  • medicine;
  • cargo and baggage X-ray inspection;
  • special applications.

 

SPECIFICATIONS

Silicon stripped detectors for measurement of energy, energy loss, nuclear particles coordinates

Parameters
Sensitive area, cm2 0,1-40
Detector thickness, μm 200 - 1500
Detector shape square, rectangle, tradezoid, etc, according to the customer specification
Operating voltage (before irradiation), V 60-600
Strips quantity 16 - 1500
Average leakage current, nA/cm2 10
Pick-off direct; with capacitive coupling
Mode of operation operation at total depletion

 

Silicon high-sensitivity photodiodes and photodiode matrices

Spectral characteristic
Spectral photosensitivity range, nm 400 – 1050
Wavelength L p for maximum photosensitivity, nm 950
Photosensitivity at L = Lp, A/W 0,5

Dark currents: Photodiodes, nA/cm2
(U = -120 B, S < 2 см2) 1 - 3
(U = -120 B, S до 5 см2) 5
Photodiode matrices (PDM)
рА/element max., U = 10 mV		 to 8

Build-up time:
Photodiodes 2 - 5 ns
PDM 0,5 - 1 µm
(r1 = 1kOhm)

Sizes:
Photodiodes Active area S = 0,1 - 5 cm 2
square, rectangle
PDM 16-element, sensitive area ~ 0,05 cm2/element

 

Silicon charged particle detectors with low leakage currents

Parameters
Active area, S, cm2 0,1 - 30
Active layer thickness, μm 280 - 500
Shape square, rectangle, circle
Operating voltage, V 60-120 (srtandart), to 300 V
Leakage current, nA/cm2 1 - 2 (S<=2 cm2) 
5 (S до 30 cm2)
Input window thickness, nm 20 (high resolution) 40 (standart)
Application

High-energy physics
Particle beam analysis
Domestic dosimetry

 

Silicon high-speed photodiodes with high sensitivity

Parameters
Active area, S, cm2 0,1 - 5
Active layer thickness, μm 280 - 500
Shape square, rectangle, circle, etc, according to the customer specification
Operating voltage, V 60 - 120 (standart), to 300
Reverse current, nA/cm2 1 - 2 (S<=2 см2)
5 (S to 30 см2)
Signal rise time, ns 2
Signal decay time, ns 2
Wavelength L measurement spectral rangeа, nm 400 - 1050
Quantum efficiency (total):
L = 550 nm 0,6
L = 400 nm 0,4