OPTICAL AND LASER SINGLE CRYSTALS
- Laser active elements based on GGG:Nd, GSGG:Nd,Cr, YSGG:Nd,Cr, YAG:Ho,Tm,Cr, YSGG:Er, YSGG:Er,Cr single crystals.
- Optical elements of isolators and Faraday rotators based on TbGG.
- Passive laser Q switches based on YAG:Cr+4, GSGG:Cr+4 single crystals.
- Crystals and substrates based on Gd3Ga5O12, Ca,Mg,Zr:Gd3Ga5O12, Gd3Sc2Ga3O12 compounds.
FIELDS OF APPLICATION
- Industrial lasers: elements based on GGG:Nd, GGG:Yb;
- Medical laser equipment: elements based on YSGG:Er, Cr, YSGG:Er and YAG:Er;
- Ophthalmologic lasers: elements based on YAG:Ho, Tm, Cr and YSGG:Ho, Tm, Cr;
- Ranging systems and medical lasers: passive Q switches based on GSGG:Cr4+ and YAG:Cr4+;
- Systems with high and mean power: elements based on GSGG:Nd, Cr and YSGG:Nd, Cr;
- TGG-based Faraday rotators and isolators;
- Fiber lasers and interstage net systems: TGG-based elements;
- Faraday isolators in fiber-optical communication lines: BiYIG films on GGG:Ca, Mg, Zr substrates;
- GGG substrates for liquid-phase epitaxy, diameter 76 and 100 mm.
SPECIFICATIONS
Laser active elements
Parameter/Name | YAG:Nd | GGG:Nd |
GSGG:Nd,Cr |
YSGG:Nd,Cr |
||||
1. Structure |
Cubic |
|||||||
2. Spatial group |
Ia3d - O10h (230) |
|||||||
3. Lattice parameter, Å |
12,01 |
12,382 |
12,560 |
12,455 |
||||
4. Density, g/cm3 |
4,5 |
7,08 |
6,439 |
5,3 |
||||
5. Dielectric constant |
11,7 |
12,11 |
- |
12,94 |
||||
OPTICAL PROPERTIES |
||||||||
6. Optical transmission (80%), μm |
0,28-5,3 |
0,3-6,5 |
- |
- |
||||
7. Refraction index |
1,83 |
1,945 |
1,952 |
- |
||||
8. Thermo-optic coefficient, dn/dт 10-6/С |
+7,3 |
- |
+9 |
- |
||||
9. Thermal lens (Ø6,3×75 mm), diopter/kW |
0,75 |
- |
1 |
- |
||||
THERMALPHYSIC PROPERTIES |
||||||||
10. Linear expansion coefficient, 10-6/°С |
7,8 |
8,5 |
8,5 |
8,1 |
||||
11. Thermal conduction, W/m°С |
11 |
7,05 |
9 |
7,4 |
||||
12. Thermal capacity, J/g°K |
0,587 |
0,381 |
0,402 |
0,534 |
||||
13. Young modulus, E, GPa |
282 |
225 |
210 |
218 |
||||
14. Poisson ratio, v |
0,28 |
0,28 |
0,28 |
0,27 |
||||
15.Mohs hardness |
8,5 |
7,75-8 |
- |
- |
||||
16. Thermal damage parameter, Rт, W/cm |
650 |
- |
520 |
- |
||||
17. Fracture stress, бf, MPa |
280 |
240 |
240 |
- |
||||
18. Ultimate strength, Кс, MPa m 0,5 |
1,4 |
- |
1,2 |
- |
||||
SPECTROSCOPIC PROPERTIES |
||||||||
|
270 |
250 |
300 |
- |
||||
20. Signal transition section, 1019cm2 |
3,4 |
2,3-2,9 |
2,9 (1,5) |
(1,5) |
||||
|
1530 |
159 |
115 |
145 |
||||
22. Signal transition section, 1020cm2 |
- |
0,6 |
0,8 |
0,63 |
||||
23. Interaction parameter, CDA(Nd-Сr), 10-38cm6/s |
9×10-4 |
1,11 |
2,2 |
1,4 |
||||
24. Saturation parameter, б/hv, J/cm2 |
0,75 |
- |
1 |
|||||
25. Surface fracture threshold 10 ns imps. (17 ns),J/cm2 |
10 |
- |
(14) |
- |
||||
26. Volume damage threshold, length 4,65 ns imps., GW/cm2 |
- |
5,56 |
- |
- |
||||
27. Pumping relative efficiency (to YAG:Nd) |
1 |
2 |
2-3 |
2-3 |
||||
GROWTH CONDITIONS |
||||||||
28. Melting temperature, ˚С |
1970 |
1740 |
1840 |
1910 |
||||
29. Growth environment |
Vacuum |
N2+2 об%O2 |
N21÷2об% O2 |
N2-1÷2 об%O2 |
||||
|
0,18 |
0,65 |
0,75 |
0,7 |
||||
|
2,4 |
3,3 |
1 |
1,1 |
||||
32. Neodymium ion concentration, аt.% |
1 |
1-3 |
2 |
2 |
||||
Neodymium ion concentration, 1020 cm-3 |
0,5 |
1÷3,5 |
2 |
2-3 |
||||
33. Chrome ion concentration, 1020 cm-3 |
- |
- |
2 |
1-2 |
||||
Passive laser Q-switches
Parameter |
Crystal type |
||
GSGG: Cr4+ |
YAG: Cr4+ |
||
Physical properties |
|||
Chemical formula |
Gd3Sc2Ga3О12: Cr4+ |
||
Structure |
CUBIC |
||
Spatial group |
Ia3d – O1h (№ 230) |
||
Density |
6.48 |
4.5 |
|
Optical properties |
|||
Optical transmission (80%), µm |
0.3 - 6.5 |
||
Refraction index in 1.064 µm |
1.96276 |
1.83 |
|
Thermo-optical coefficient, 10-6/°C |
9.04 |
7.3 |
|
Thermal damage theshold, W/cm |
> 5 |
7.9 |
|
Service properties |
|||
Wavelength, µm |
0.9-1.2 |
||
Initial transmission at operating wavelength length |
10 - 80% |
||
Initial absorption coefficient, cm-1 |
16 |
2-3 |
|
Contrast coefficient |
6-15 |
||
Process-dependent parameters |
|||
Orientation axis |
[100] or [111] ± l5' |
||
Size, mm diamerer length |
5 – 20 ±0.025 1 – 10 ±0.250 |
||
End faces parallelism, s |
10 |
||
End faces perpendicularity, min |
5 |
||
Flatness |
1/10th wavelength |
||
Front surface finish |
P IV State Standart 11141-84 |
||
Side surface finish, µm |
60-80 |
||
Optical isolating materials
Parameter |
Crystal type |
TGG |
|
Chemical formula |
Тb3Gа5O12 |
Structure |
CUBIC |
Spatial group |
Ia3d-О10h (№230) |
Lattice parameter, Å |
12.347 |
Thermal conductivity, Wm-1K-1 |
4.5 |
Refraction index 1060 nm 600 nm |
1.954 1.978 |
Dielectric constant |
12.40 ±0.03 |
Dielectric loss, tan σ |
0.0005 |
Optical transmission, at 500-1400 nm |
> 99 % |
Absorption coefficient, at 1060 nm, cm-1 |
≤0.0025 |
Verdet constant, at 500 – 1060 nm min щукsted-1, cm-1
at 1058 nm |
0.75 - 0.12 0.46 0.1272 |
Birefringence, % |
≤ 0.01 |
Loss factor, dB |
>30 |
Perfection factor, at 633 nm, min/dB |
1.5 |
Impulse damage threshold, MW cm-2 |
>300 |
Breakdown threshold in nonrecurrent mode at pulse duration 1 ns of single-mode beam of diameter 2 mm, J/cm2 |
7-8 |
Crystallographic axis orientation |
[100] or [111] ±15' |
Size, mm: diameter length |
2 - 30 5 - 50 |
Side surface finish by diamond wheel, µm |
60-80 |
Substrate crystals
Parameter |
Crystal type |
||
GGG: Ca, Mg, Zr |
GSGG |
GGG |
|
Structure |
CUBIC |
||
Spatial group |
la3d – О10h (№ 230) |
||
Chemical formula |
Gd3-xCaxGa5-x-2yMgyZrx+yO12 |
Gd3ScxGa5-xO12 |
Gd3Ga5O12 |
Density, g/cm3 |
6.72 |
6.48 |
7.07 |
Melting temperature, K |
1720 |
1840 |
1740 |
Dielectric constants |
10 |
10 |
|
Lattice parameters, Å |
12.493 ± 0.002 |
12.563 ± 0.002 |
12.383 ± 0.002 |
Linear expansion coefficient, 10-6/°C |
7 |
6.5 |
|
Refraction index at 26.0°±0.4 6438.47 Å 10640.00 Å |
(y=0) 1.94941 1.93894 |
1.96276 1.94203 |
1.945 |
Thermal conductivity, Wm-1K-1 |
5.03 |
6.4 |
|
Thermo-optical coefficient, 10-6/C° at 1.152 µm2 |
12.45 |
9.04 |
|
Color |
colorless |
||
Diameter, mm |
76 ± 0.25 |
176.2±0.25, 101.6 ± 0.25 |
|
Thickness, µm |
500 ± 20 |
||
Orientation |
[111], [100] ±15' or other |
||
Primary flat |
(ĪI0)±2.0 |
||
Secondary flat |
(ĪĪ2), 90±5° from primary flat |
||
Flatness |
< 5 µm on 80% of wafer area |
||
Defect density, cm-2 |
0 -10 |
0.5 |