MATERIALS BASED ON AIIIBV COMPOUNDS

• Development and fabrication of polycrystalline gallium phosphide.

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• Development and fabrication of polycrystalline indium phosphide.

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• Development and fabrication of single crystal gallium phosphide doped by sulphur, diameter, 2",3",4".

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• Development and fabrication of single crystal gallium phosphide doped by zinc, diameter 2",3",4".

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• Development and fabrication of undoped single crystal gallium phosphide ,diameter 2",3",4".

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• Development and fabrication of high-resistance single crystal gallium phosphide, diameter 2",3",4".

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• Development and fabrication of boron oxide.

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• Development and fabrication of single crystal indium phosphide doped by iron, diameter 2",3",4".

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• Development and fabrication of undoped single crystal indium phosphide, diameter 2",3",4".

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• Development and fabrication of single crystal indium phosphide, n-type, diameter 2",3",4".

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• Development and fabrication of single crystal indium phosphide, p-type, diameter 2",3",4".

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• Development of prospective process equipment for AIIIBV-based single crystal growth.

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• Development of design documentation to obtain AIIIBV-based single crystals. 

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• Working out proposals to governmental programs on issues of developments and production of semiconductor materials for microwave frequency equipment and optoelectronics.